Self-aligned two-dimensional material transistors

ABSTRACT

A semiconductor device and method for forming the same. The device comprises at least a dielectric layer, a two-dimensional (2D) material layer, a gate structure, and source/drain contacts. The 2D material layer contacts the dielectric layer. The gate structure contacts the 2D material layer. The source/drain contacts are disposed above the 2D material layer and contact the gate structure. The method includes forming a structure including at least a handle wafer, a 2D material layer, a gate structure in contact with the 2D material layer, an insulating layer, and a sacrificial layer. A portion of the sacrificial layer is etched. An inter-layer dielectric is formed in contact with the insulating layer and sidewalls of the sacrificial layer. The sacrificial layer and a portion of the insulating layer are removed. Source and drain contacts are formed in contact with the portion of the 2D material layer.

BACKGROUND OF THE INVENTION

The present disclosure generally relates to the field of semiconductors,and more particularly relates to semiconductor structures comprisingtwo-dimensional materials.

Two-dimensional (2D) materials are crystalline materials having a singlelayer of atoms. 2D materials have gained interest for use insemiconductor fabrication due to their enhanced electrical propertiesover non-2D materials and their potential for higher device densities,decreased features sizes, etc.

SUMMARY OF THE INVENTION

In one embodiment, a method of forming a semiconductor device isdisclosed. The method comprises forming a structure comprising at leasta handle wafer, a two-dimensional (2D) material layer, a gate structureformed on and in contact with the 2D material layer, an insulating layerin contact with the 2D material layer and the gate structure, and asacrificial layer in contact with the insulating layer and the gatestructure. A portion of the sacrificial layer is etched thereby exposinga first portion of the insulating layer. An inter-layer dielectric isformed on the first portion of the insulating layer and sidewalls of thesacrificial layer. The sacrificial layer and a second portion of theinsulating layer are removed thereby exposing a portion of the 2Dmaterial layer. A source contact layer and a drain contact layer areformed in contact with the portion of the 2D material layer.

In another embodiment, a method of forming a semiconductor device isdisclosed. The method comprises forming a structure comprising asubstrate, an insulating layer in contact with the substrate, asacrificial layer in contact with the insulating layer, and a gatestructure in the sacrificial and insulating layers. The structure isflipped and bonded to a first handle wafer. The substrate is removed anda two-dimensional material (2D) layer is formed in contact with theinsulating layer and the gate structure. The structure is flipped afterthe 2D material layer has been formed, and bonded the structure to asecond handle wafer. The first handled wafer is then removed.

In a further embodiment, semiconductor device is disclosed. Thesemiconductor device comprises at least a dielectric layer, atwo-dimensional (2D) material layer, a gate structure, a source contactlayer, and a drain contact layer. The 2D material is disposed on and incontact with the dielectric layer. The gate structure is disposed on andin contact with the 2D material layer. The source contact layer isdisposed above the 2D material layer and in contact with the gatestructure. The drain contact layer is disposed above the 2D materiallayer and in contact with the gate structure.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying figures where like reference numerals refer toidentical or functionally similar elements throughout the separateviews, and which together with the detailed description below areincorporated in and form part of the specification, serve to furtherillustrate various embodiments and to explain various principles andadvantages all in accordance with the present invention, in which:

FIG. 1 is a cross-sectional view of an initial structure comprising asilicon-on-insulator (SOI) substrate having a silicon oxide layer andsacrificial polysilicon layer formed thereon according to one embodimentof the present invention;

FIG. 2 is a cross-sectional view of the structure after a trench hasbeen formed in a portion of the sacrificial polysilicon layer andsilicon oxide layer according to one embodiment of the presentinvention;

FIG. 3 is a cross-sectional view of the structure after a spacer/linerhas been formed on sidewalls of the trench according to one embodimentof the present invention;

FIG. 4 is a cross-sectional view of the structure after a gate has beenformed within the trench according to one embodiment of the presentinvention;

FIG. 5 is a cross-sectional view of the structure after a dielectriclayer has been formed on the sacrificial polysilicon layer and gateaccording to one embodiment of the present invention;

FIG. 6 is a cross-sectional view of the structure has beenflipped/rotated and bonded to a first handle wafer according to oneembodiment of the present invention;

FIG. 7 is a cross-sectional view of the structure has been after theoriginal SOI substrate has been removed according to one embodiment ofthe present invention;

FIG. 8 is a cross-sectional view of the structure after one or more 2Dmaterials have been formed/deposited on the structure according to oneembodiment of the present invention;

FIG. 8A is a plain view of the structure shown FIG. 8 according to oneembodiment of the present invention;

FIG. 9 is a cross-sectional view of the structure has beenflipped/rotated and bonded to a second handle wafer according to oneembodiment of the present invention;

FIG. 10 is a cross-sectional view of the structure after the firsthandle wafer has been removed according to one embodiment of the presentinvention;

FIG. 11 is a cross-sectional view of the structure after a portion ofthe sacrificial polysilicon layer has been etched according to oneembodiment of the present invention;

FIG. 11A is another cross-sectional view of the structure after theportion of the sacrificial polysilicon layer has been etched accordingto one embodiment of the present invention;

FIG. 11B is a plain view of the structure shown in FIG. 11 according toone embodiment of the present invention;

FIG. 12 is a cross-sectional view of the structure after an inter-layerdielectric has been deposited according to one embodiment of the presentinvention;

FIG. 12A is another cross-sectional view of the structure after theinter-layer dielectric has been deposited according to one embodiment ofthe present invention;

FIG. 12B is a plain view of the structure shown in FIG. 12 according toone embodiment of the present invention;

FIG. 13 is a cross-sectional view of the structure after the sacrificialpolysilicon layer has been removed according to one embodiment of thepresent invention;

FIG. 13A is another cross-sectional view of the structure after thesacrificial polysilicon layer has been removed according to oneembodiment of the present invention;

FIG. 13B is a plain view of the structure shown in FIG. 13 according toone embodiment of the present invention;

FIG. 14 is a cross-sectional view of the structure after exposedportions of the silicon oxide layer have been removed according to oneembodiment of the present invention;

FIG. 14A is another cross-sectional view of the structure after theexposed portions of the silicon oxide layer have been removed accordingto one embodiment of the present invention;

FIG. 14B is a plain view of the structure shown in FIG. 14 according toone embodiment of the present invention;

FIG. 15 is a cross-sectional view of the structure after source/draincontacts have been formed according to one embodiment of the presentinvention;

FIG. 15A is another cross-sectional view of the structure after thesource/drain contacts have been formed according to one embodiment ofthe present invention;

FIG. 15B is a plain view of the structure shown in FIG. 15 according toone embodiment of the present invention;

FIG. 16 is an operational flow diagram illustrating one example of aprocess for fabricating a self-aligned 2D material transistor accordingto one embodiment of the present invention; and

FIG. 17 is an operational flow diagram illustrating another example of aprocess for fabricating a self-aligned 2D material transistor accordingto one embodiment of the present invention.

DETAILED DESCRIPTION

It is to be understood that the present disclosure will be described interms of a given illustrative architecture; however, otherarchitectures, structures, substrate materials, process features, andsteps may be varied within the scope of the present disclosure.

It will also be understood that when an element such as a layer, regionor substrate is referred to as being “on” or “over” another element, itcan be directly on the other element or intervening elements may also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present. It will also be understood that when an element isreferred to as being “connected” or “coupled” to another element, it canbe directly connected or coupled to the other element or interveningelements may be present. In contrast, when an element is referred to asbeing “directly connected” or “directly coupled” to another element,there are no intervening elements present.

The present disclosure may include a design for an integrated circuitchip that may be created in a graphical computer programming languageand stored in a computer storage medium (such as a disk, tape, physicalhard drive, or virtual hard drive such as in a storage access network).If the designer does not fabricate chips or the photolithographic masksused to fabricate chips, the designer may transmit the resulting designby physical means (e.g., by providing a copy of the storage mediumstoring the design) or electronically (e.g., through the Internet) tosuch entities, directly or indirectly. The stored design is thenconverted into the appropriate format (e.g., GDSII) for the fabricationof photolithographic masks, which typically include multiple copies ofthe chip design in question that are to be formed on a wafer. Thephotolithographic masks are utilized to define areas of the wafer(and/or the layers thereon) to be etched or otherwise processed.

Methods as described herein may be used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher-level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

Reference in the specification to “one embodiment” or “an embodiment” ofthe present principles, as well as other variations thereof, means thata particular feature, structure, characteristic, and so forth describedin connection with the embodiment is included in at least one embodimentof the present principles. Thus, the appearances of the phrase “in oneembodiment” or “in an embodiment”, as well any other variations,appearing in various places throughout the specification are notnecessarily all referring to the same embodiment.

As noted above, 2D materials are crystalline materials having a singlelayer of atoms. 2D materials have gained interest for use insemiconductor fabrication. However, 2D materials present variousproblems during the semiconductor fabrication process. For example, itis difficult to directly deposit a high-k material on 2D materialsbecause there are no dangling bonds on a defect-free 2D materialsurface. A plasma precursor could be used, but the plasma damages the 2Dmaterial causing mobility degradation. Also, common CMOS processes suchas reactive ion etching (RIE) are generally not compatible with 2Dmaterials since they are easily damaged by, for example, high-energyplasma. Even further, conventional fabrication processes for 2D-basedtransistor generally utilize a back-gate structure. These fabricationprocesses are problematic since they do not provide any self-alignmentof the features, which leads to a high parasitic capacitance. As will bediscussed in greater detail below, embodiments of the present inventionovercome the above problems by forming a self-aligned gate on adummy/sacrificial substrate and then replacing the substrate with a 2-Dmaterial.

FIGS. 1-15B illustrate various processes and structures for fabricationa self-aligned 2D material transistor. FIG. 1 shows an initial structure100 comprising a silicon-on-insulator (SOI) substrate 102, a siliconoxide (SiO2) layer 104, and a sacrificial/dummy polysilicon layer 106.In one embodiment, the SOI substrate 102 comprises a substrate layer 108comprising, for example, silicon (Si); a buried oxide (BOX) layer 110comprising, for example, SiO2; and an SOI layer 112 comprising, forexample, silicon. It should be noted that the layers of the SOIsubstrate 102 is not limited to these materials and other materials areapplicable as well. It should also be noted that embodiments are notlimited to an SOI substrate as other substrates are applicable as well.

The SiO2 layer 104 may be formed on and in contact with the top siliconlayer 112 of the SOI substrate, and may be formed using chemical vapordeposition (CVD), thermal oxidation, and/or the like. The SiO2 layer 104may be used to protect subsequently formed/deposited 2D material layersas will be discussed in greater detail below. The sacrificialpolysilicon layer 106 may be formed on and in contact with the SiO2layer 104 using CVD or any other application deposition process. A gatecavity (trench) 202 may then be formed through the polysilicon layer 106and the SiO2 layer 104, as shown in FIG. 2. The gate cavity 202 exposesthe top surface of a portion of the top SOI layer 112. The gate cavity202 may be formed using one or more photolithographic patterningtechniques through which a pattern is formed in a patterning stack andsubsequently transferred down into the polysilicon layer 106 and theSiO2 layer 104 using a process such as RIE.

FIG. 3 shows that a spacer/liner 302 is formed on the sidewalls of thegate cavity 202. In one embodiment, the spacer 302 may be formed bydepositing a conformal layer of spacer material such as, but not limitedto, silicon nitride (SiN), over the structure followed by an anisotropicion etch that removes the conformal layer from all horizontal surfaces(those surfaces normal or about normal to the etchant ion stream). Theanisotropic etch leaves an inner spacer 302 on sidewalls of the gatecavity 202. A gate structure 402 is then formed within the gate cavity202, as shown in FIG. 4. For example, FIG. 4 shows a result of adeposition of a high dielectric constant (high-k) gate insulator layer404 followed by deposition of a gate conductor 406.

The gate structure 402 may be formed by blanket depositing a high high-kgate dielectric material on the bottom and vertical sidewalls of thespacer 302 within the gate cavity 202. The high-k dielectric materialmay be a dielectric metal oxide having a dielectric constant greaterthan 8.0. The dielectric metal oxide may be deposited by a process suchas CVD, physical vapor deposition (PVD), molecular beam deposition(MBD), pulsed laser deposition (PLD), liquid source misted chemicaldeposition (LSMCD), atomic layer deposition (ALD), etc. Examples ofhigh-k materials include, but are not limited to high-k materialsinclude, but are not limited to, metal oxides such as hafnium oxide,hafnium silicon oxide, hafnium silicon oxynitride, lanthanum oxide,lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide,zirconium silicon oxynitride, tantalum oxide, titanium oxide, bariumstrontium titanium oxide, barium titanium oxide, strontium titaniumoxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, andlead zinc niobate. The insulating layer 1102, 1104 may further includedopants such as lanthanum or aluminum.

The portions of the high-k gate dielectric material above the topsurface of the sacrificial polysilicon layer 106 may be removed bychemical mechanical planarization (CMP), recess etch, or a combinationthereof. In some embodiments, portions of the high-k gate dielectricmaterial within the gate cavity may be selectively etch to recess thehigh-k layer 404 below a top surface of the cavity 202. A gate conductormaterial may then be deposited in the gate cavity to form the gateconductor 406. Any excess gate conductor material outside of the gatecavity may be removed by CMP, recess etch, or a combination thereof.Examples of conductive gate materials include (but are not limited to)polycrystalline or amorphous silicon, germanium, silicon germanium, ametal (e.g., tungsten, titanium, tantalum, ruthenium, zirconium, cobalt,copper, aluminum, lead, platinum, tin, silver, gold), a conductingmetallic compound material (e.g., tantalum nitride, titanium nitride,tungsten silicide, tungsten nitride, ruthenium oxide, cobalt silicide,nickel silicide), carbon nanotube, conductive carbon, or any suitablecombination of these materials. The conductive gate material may furthercomprise dopants that are incorporated during or after deposition.

In some embodiments, the top surface of the high-k layer 404 and thegate conductor layer 406 are coplanar. However, in other embodiments thetop surface of the high-k layer 404 is below a top surface of the gateconductor layer 406 such that a portion of the gate conductor layer 406is formed on top of and in contact with the top surface of the high-klayer 404. In addition, the conductive gate material may comprisemultiple layers such as gate work function setting layer (work functionmetal) and/or a conductive gate layer. The work function metal bedeposited employing CVD, sputtering, or plating. The work function metallayers may comprise one or more metals having a function suitable totune the work function of NFETs or PFETs. In various embodiments, a workfunction layer may be a conductive nitride, including but not limited totitanium nitride (TiN), titanium aluminum nitride (TiAlN), hafniumnitride (HfN), hafnium silicon nitride (HfSiN), tantalum nitride (TaN),tantalum silicon nitride (TaSiN), tungsten nitride (WN), molybdenumnitride (MoN), niobium nitride (NbN); a conductive carbide, includingbut not limited to titanium carbide (TiC), titanium aluminum carbide(TiAlC), tantalum carbide (TaC), hafnium carbide (HfC); or combinationsthereof. The work function layer may include multiple layers of workfunction materials, for example, a work function layer can be a TiN/TiCstack. In some embodiments, the full metal stack of the gate structure402 may include both work function layers and an additional layer suchas tungsten on top of the work function layers.

The gate conductor layer 406 may be recessed below a top surface of thesacrificial polysilicon layer 106. In some embodiments the spacer 302may also be recessed during this process. A wet or dry etch may be usedto etch the gate conductor layer 406. A capping material such as, butnot limited to, silicon nitride, may then be deposited over thestructure such that it fills the recess within the gate cavity. Excesscapping material may then be removed by, for example, CMP, such that atop surface of the material is co-planar with a top surface of thesacrificial polysilicon layer 106. This process forms a cap 408 abovethe gate structure 402 and in contract with a top surface of the spacer302 and the gate conductor layer 406. In some embodiments, the spacer302 and/or cap 408 are considered part of the gate structure 402. Itshould be noted that embodiments of the present invention are notlimited to the process for forming the gate layers or the materialsdiscussed above. Other processes and materials may be utilized to formthe gate structure 402.

FIG. 5 shows that a dielectric layer 502 comprising, for example,silicon oxide may be formed on and in contact with a top surface of thesacrificial polysilicon layer 106 and the gate cap 408. The dielectriclayer may be formed by CVD, thermal oxidation, and/or the like. Thestructure 100 is then flipped/rotated and bonded to a new handle wafer602, as shown in FIG. 6. After rotation and bonding, the bottom surfaceof the original substrate 108 becomes the top surface of the structure100 and the top surface of the dielectric layer 502 (in the previousorientation) has been bonded to the top surface of the newsubstrate/wafer 602. Any bonding technique may be utilized to bond thedielectric layer 502 to the new substrate 602. The new substrate 602 maybe single crystalline and or a bulk substrate, asemiconductor-on-insulator (SOI) substrate, or a hybrid substrate.

Once the structure of FIG. 5 has been bonded to the new substrate 602,the original substrate 102 may be removed as shown in FIG. 7. Variousprocesses may be utilized to remove the original substrate 102. Forexample, the substrate layer 108 may be removed using ammonia and theBOX layer 110 may be removed using HF-based chemicals. The SOI layer 112of the original substrate 102 may be selectively removed usingtetramethylammonium hydroxide and/or the like. The removal of thesubstrate 102 exposes a surface of the SiO2 layer 104, a surface of thespacer 302, and a surface of the high-k layer 404. These exposedsurfaces were previously the bottom surfaces of these layers prior tothe structure being flipped/rotated and are now referred to as topsurfaces in the structure's current orientation.

One or more 2D materials 802 may then be formed or transferred onto andin contact with the exposed surfaces of the SiO2 layer 104, the spacer302, and the high-k layer 404 as shown in FIG. 8. As discussed above, a2D material is a crystalline material having a single layer of atoms. 2Dmaterials have strong bonds in two dimensions and weak bonds in a thirddimension. Examples of 2D materials include (but are not limited to)graphene and other -ene materials, graphane and other -ane or -idecompounds, transition metal dichalcogenides (TMDCs) including molybdenumdisulfide (MoS2), and/or the like. The 2D material layer 802 may beformed using any suitable deposition method such as plasma-enhanced CVD(PECVD), ALD, CVD, molecular beam epitaxy (MBE), epitaxial growth, metaldeposition with chemical reaction, a Langmuir-Blodgett process, and/orthe like.

The 2D material layer 802 may be etched to define the width of thechannel, as shown in the top-down view of FIG. 8A. For example, apatterning stack or layer may be formed over the 2D material layer 802and patterned using one or more photolithographic patterning techniques.The pattern may then be transferred to the 2D material layer 802 usingone or more etching processes such as RIE for defining the channelwidth.

The structure of FIG. 8 is then flipped or rotated and bonded to a finalhandle wafer 902, as shown in FIG. 9. The structure 100 is noworientated in the same direction as it was in FIGS. 1-5 (i.e., prior tothe initial flipping/rotating operation). In one embodiment, the finalwafer/substrate 902 comprise a bottom layer of silicon 904 and a toplayer of SiO2 906. However, other insulating materials may be used toform the final handle wafer 902. The SiO2 layer 906 may be formed by anysuitable process such as CVD or thermal oxidation. The structure of FIG.8 is bonded to the final wafer/substrate 902 such that a bottom surfaceof the 2D material layer 802 (in the orientation shown in FIG. 9)contacts a top surface of the SiO2 layer 906 of the final handle wafer902. One example of bonding wafer includes pressing the wafers togetherand utilizing a thermal treatment to enhance the bonding.

FIG. 10 shows that after the structure has been bonded to the finalwafer/substrate 902, the first handle wafer 602 may then be removed by,for example, one or more etching, grinding, and/or polishing processes.The removal of the first handle wafer 602 exposes the top surface (inthe orientation shown in FIG. 10) of the sacrificial polysilicon layer106 and the top surface of the cap layer 408. The sacrificialpolysilicon layer 106 is then etched to define a width for subsequentmetal contacts as shown in FIGS. 11 to 11B. The sacrificial polysiliconlayer 106 may be etched by, for example, forming a patterningstack/layer over the sacrificial polysilicon layer 106 and the cap layer408, and forming a pattern in the stack/layer using one or morelithographic processes. The pattern may then be transferred down to thesacrificial polysilicon layer 106 using one or more etching processes.This process exposes a portion of the SiO2 layer 104 situated under andin contact with the sacrificial polysilicon layer 106 as shown in FIGS.11A and 11B.

An inter-layer dielectric (ILD) 1202 may then be deposited over thestructure 100 and planarized as shown in FIGS. 12 to 12B. The ILD 1202is deposited/formed in contact with the exposed top surface of the SiO2layer 104; exposed portions of the outer sidewalls of the spacer 302;exposed portions of the sidewalls of the cap layer 408; and sidewalls ofthe sacrificial/dummy polysilicon layer 106. In one embodiment, a topsurface of the ILD 1202 may be co-planar with the top surface of the caplayer 408 and the sacrificial/dummy polysilicon layer 106.

One or more etching processes such as RIE are then performed to removethe sacrificial/dummy polysilicon layer 106 as shown in FIGS. 13 to 13B.The etching process forms a trench 1302 and stops on the SiO2 layer 104.Exposed portions of the SiO2 layer 104 within the trench 1302 are thenremoved as shown in FIGS. 14 to 14B. In one embodiment, a wet etchingprocess such as a hydrofluoric acid (HF) etch may be utilized to removethe exposed portions of the SiO2 layer 104. The HF etch is compatiblewith the 2D material(s) layer 802. It should be noted that other etchingprocesses compatible with 2D materials may also be utilized as well. Inat least some embodiments the exposed portions of the SiO2 layer 104 arethin, which allows a lateral etch of these portions to be controlled.The removal of the exposed portions of SiO2 layer 104 exposes portionsof the underlying 2D material 802.

After the exposed portions of the SiO2 layer 104 have been removed, oneor more metal contact layers 1502 (also referred to herein as“source/drain contacts 1502”) may be formed as shown in FIGS. 15 to 15B.Since the gate 402 is a self-aligned gate it acts as mask thatestablishes the source/drain. The contact layers 1502 may be formed suchthat a bottom surface of the contact 1502 contacts the top surface of aportion of the SiO2 layer 906; the top surface of the 2D material 802;inner sidewalls of the SiO2 layer 104; inner sidewalls of the ILD 1202;outer sidewalls of the spacer 302; and outer sidewalls of the cap layer408. The contact layer(s) 1502 may be formed by CVD, PVD, ALD, or anycombination thereof. The contact layer(s) 1502 may comprise titanium(Ti), tantalum (Ta), hafnium (Hf), zirconium (Zr), niobium (Nb), alloyscomprising carbon, and/or the like. However, other materials areapplicable as well. After the contact layers 1502 have beenformed/deposited, a CMP process may be performed to remove any excessmaterials and planarize the contact layers 1502. In one embodiment, thetop surface contact layers 1502 may be co-planar with the top surface ofthe ILD 1202 and the top surface of the cap layer 408.

FIG. 16 is an operational flow diagram illustrating one example of aprocess for fabricating a self-aligned 2D material transistor. It shouldbe noted that each of the steps shown in FIG. 11 has been discussed ingreater detail above with respect to FIGS. 1 to 15B. A structure isformed at step 1602. The structure comprises at least a handle wafer, atwo-dimensional (2D) material layer, a gate structure formed on and incontact with the 2D material layer, an insulating layer in contact withthe 2D material layer and the gate structure, and a sacrificial layer incontact with the insulating layer and the gate structure. A portion ofthe sacrificial layer is etched thereby exposing a first portion of theinsulating layer, at step 1604. An inter inter-layer dielectric isformed on the first portion of the insulating layer and sidewalls of thesacrificial layer, at step 1606. The sacrificial layer and a secondportion of the insulating layer are removed thereby exposing a portionof the 2D material layer, at step 1608. A source contact layer and adrain contact layer are formed in contact with the portion of the 2Dmaterial layer, at step 1610.

FIG. 17 is an operational flow diagram illustrating another example of aprocess for fabricating a self-aligned 2D material transistor. It shouldbe noted that each of the steps shown in FIG. 11 has been discussed ingreater detail above with respect to FIGS. 1 to 15B. A structure isformed, at step 1702. The structure comprises at least a substrate, aninsulating layer in contact with the substrate, a sacrificial layer incontact with the insulating layer, and a gate structure in thesacrificial and insulating layers. The structure is flipped and bondedto a first handle wafer, at step 1704. The substrate is then removed, atstep 1706. A two-dimensional material (2D) layer is formed in contactwith the insulating layer and the gate structure, a step 1708. Thestructure is flipped after the 2D material layer has been formed and isthen bonded to a second handle wafer, at step 1710. The first handlewafer is removed, at step 1712.

Although specific embodiments have been disclosed, those having ordinaryskill in the art will understand that changes can be made to thespecific embodiments without departing from the spirit and scope of thedisclosure. The scope of the disclosure is not to be restricted,therefore, to the specific embodiments, and it is intended that theappended claims cover any and all such applications, modifications, andembodiments within the scope of the present disclosure.

It should be noted that some features of the present disclosure may beused in one embodiment thereof without use of other features of thepresent disclosure. As such, the foregoing description should beconsidered as merely illustrative of the principles, teachings,examples, and exemplary embodiments of the present disclosure, and not alimitation thereof.

Also note that these embodiments are only examples of the manyadvantageous uses of the innovative teachings herein. In general,statements made in the specification of the present application do notnecessarily limit any of the various claimed disclosures. Moreover, somestatements may apply to some inventive features but not to others.

What is claimed is:
 1. A method of forming a semiconductor device, themethod comprising: forming a structure comprising at least a handlewafer, a two-dimensional (2D) material layer, a gate structure formed onand in contact with the 2D material layer, an insulating layer incontact with the 2D material layer and the gate structure, and asacrificial layer in contact with the insulating layer and the gatestructure; etching a portion of the sacrificial layer thereby exposing afirst portion of the insulating layer; forming an inter-layer dielectricon the first portion of the insulating layer and sidewalls of thesacrificial layer; removing the sacrificial layer and a second portionof the insulating layer thereby exposing a portion of the 2D materiallayer; and forming a source contact layer and a drain contact layer eachin contact with the portion of the 2D material layer.
 2. The method ofclaim 1, wherein forming the structure comprises: forming the insulatinglayer on a top surface of a substrate; and forming the sacrificial layeron and in contact with the insulating layer.
 3. The method of claim 2,wherein forming the structure further comprises: forming a trench in thesacrificial layer and the insulating layer thereby exposing a portion ofthe substrate; and forming the gate structure within the trench and incontact with the exposed portion of the substrate.
 4. The method ofclaim 3, wherein forming the gate structure comprises at least: forminga spacer layer on sidewalls of the trench; forming a gate dielectriclayer in the trench in contact with the exposed portion of the substrateand the spacer layer; forming a gate conductor layer in contact with atleast the gate dielectric layer; and forming a capping layer in contactwith the spacer layer and the gate conductor layer.
 5. The method ofclaim 3, wherein forming the structure further comprises: forming adielectric layer on and in contact with the sacrificial layer andcapping laying; flipping the structure after forming the dielectriclayer; and bonding, after the structure has been flipped, to anintermediary handle wafer.
 6. The method of claim 5, wherein forming thestructure further comprises: removing the substrate after the structurehas been bonded to the intermediary handle wafer; and forming the 2Dmaterial layer in contact with the insulating layer and gate structure.7. The method of claim 6, wherein forming the structure furthercomprises: flipping the structure after forming the 2D material layer;bonding the structure to the handle wafer after the structure has beenflipped; and removing the intermediary handle wafer.
 8. A method offorming a semiconductor device structure, the method comprising: forminga structure comprising at least a substrate, an insulating layer incontact with the substrate, a sacrificial layer in contact with theinsulating layer, and a gate structure in the sacrificial and insulatinglayers; flipping the structure and bonding the structure to a firsthandle wafer; removing the substrate; forming a two-dimensional material(2D) layer in contact with the insulating layer and the gate structure;flipping the structure after the 2D material layer has been formed andbonding the structure to a second handle wafer; and removing the firsthandle wafer.
 9. The method of claim 8, further comprising: etching aportion of the sacrificial layer thereby exposing a first portion of theinsulating layer; and forming an inter-layer dielectric on the firstportion of the insulating layer and sidewalls of the sacrificial layer.10. The method of claim 9, further comprising: removing the sacrificiallayer and a second portion of the insulating layer thereby exposing aportion of the 2D material layer; and forming a source contact layer anda drain contact layer each in contact with the portion of the 2Dmaterial layer.
 11. The method of claim 8, wherein forming the structurecomprises: forming the insulating layer on a top surface of a substrate;and forming the sacrificial layer on and in contact with the insulatinglayer.
 12. The method of claim 11, wherein forming the structure furthercomprises: forming a trench in the sacrificial layer and the insulatinglayer thereby exposing a portion of the substrate; and forming the gatestructure within the trench and in contact with the exposed portion ofthe substrate.
 13. The method of claim 12, wherein forming the gatestructure comprises at least: forming a spacer layer on sidewalls of thetrench; forming a gate dielectric layer in the trench in contact withthe exposed portion of the substrate and the spacer layer; forming agate conductor layer in contact with at least the gate dielectric layer;and forming a capping layer in contact with the spacer layer and thegate conductor layer.
 14. The method of claim 13, further comprising:forming a dielectric layer on and in contact with the sacrificial layerand capping laying prior to flipping the structure and bonding thestructure to the first handle wafer.